Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device.

Abstract

In this study, by inserting a buffer layer of TiOx between the SiOx:Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiOx:Ag/TiOx/p++-Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently controlled during analog switching. The synaptic characteristics of the memristor device with a wide range of resistance change for weight modulation by implementing positive or negative pulse trains have been investigated extensively. Several learning and memory functions have been achieved simultaneously, including potentiation/depression, paired-pulse-facilitation (PPF), short-term plasticity (STP), and STP-to-LTP (long-term plasticity) transition controlled by repeating pulses more than a rehearsal operation, and spike-time-dependent-plasticity (STDP) as well. Based on the analysis of logarithmic I-V characteristics, it has been found that the controlled evolution/dissolution of conductive Ag-filaments across the dielectric layers can improve the performance of the testing memristor device.

• Authors: Nasir Ilyas, Dongyang Li, Chunmei Li, Xiangdong Jiang, Yadong Jiang, Wei Li
• Journal: Nanoscale research letters (Nanoscale Res Lett) Vol. 15 Issue 1 Pg. 30 (Jan 31 2020) ISSN: 1931-7573 [Print] United States
• PMID: 32006131 (Publication Type: Journal Article)